Induced electric conductivity in organic polymers

• Konstantin Y. Arutyunov,
• Anatoli S. Gurski,
• Vladimir V. Artemov,
• Alexander L. Vasiliev,
• Azat R. Yusupov,
• Danfis D. Karamov and
• Alexei N. Lachinov

Beilstein J. Nanotechnol. 2022, 13, 1551–1557, doi:10.3762/bjnano.13.128

• following values n0 = 1021−1023 m−3, μ = 10−15 to 10−17 m2/Vs. The analysis of the I–V characteristics within the framework of Schottky barrier formation makes it possible to estimate the height of potential barriers at the metal/polymer interfaces utilizing the Richardson expression [18]: where T is the

Morphology-driven gas sensing by fabricated fractals: A review

• Vishal Kamathe and
• Rupali Nagar

Beilstein J. Nanotechnol. 2021, 12, 1187–1208, doi:10.3762/bjnano.12.88

• resulting in more interaction sites at which analyte and sensor can interact. The authors termed the mechanism “random tunneling junction network”. Here, electron transport across the fractal structures is assumed to occur via tunneling. Different fractal dimensions lead to different Schottky barrier

• heights across the film surface with few locations having a small barrier height depending upon fractal dimension and geometry. Such locations serve as sites with improved sensitivity and respond to the gas faster than other locations that have higher Schottky barrier heights. The gas sensing measurements

Spontaneous shape transition of Mn_xGe_1−x islands to long nanowires

• S. Javad Rezvani,
• Luc Favre,
• Gabriele Giuli,
• Yiming Wubulikasimu,
• Isabelle Berbezier,
• Augusto Marcelli,
• Luca Boarino and
• Nicola Pinto

Beilstein J. Nanotechnol. 2021, 12, 366–374, doi:10.3762/bjnano.12.30

• high Curie temperature is necessary. Mn–Ge alloys epitaxially grown on Ge substrates have been shown to be promising candidates for such spintronic systems [11][12][13]. Transition metal germanides that have sharp interfaces and a tunable Schottky barrier, in particular, can advantageously replace

Piezotronic effect in AlGaN/AlN/GaN heterojunction nanowires used as a flexible strain sensor

• Jianqi Dong,
• Liang Chen,
• Yuqing Yang and
• Xingfu Wang

Beilstein J. Nanotechnol. 2020, 11, 1847–1853, doi:10.3762/bjnano.11.166

• ITO transparent electrodes were patterned and deposited onto the two ends of the AlGaN/AlN/GaN heterojunction NWs to eliminate the impact of the Schottky barrier. In addition, they fixed the NW to the flexible PET substrate. A schematic of the equipment (electric one-dimensional translation stage) for

Unravelling the interfacial interaction in mesoporous SiO₂@nickel phyllosilicate/TiO₂ core–shell nanostructures for photocatalytic activity

• Bridget K. Mutuma,
• Xiluva Mathebula,
• Isaac Nongwe,
• Bonakele P. Mtolo,
• Boitumelo J. Matsoso,
• Rudolph Erasmus,
• Zikhona Tetana and
• Neil J. Coville

Beilstein J. Nanotechnol. 2020, 11, 1834–1846, doi:10.3762/bjnano.11.165

• photocatalysts is rarely reported. Nickel-based nanomaterials are of great interest for photocatalytic activity owing to their low cost, high optical absorption coefficients, and low bandgap energies [29][30][31]. Most importantly, the formation of a Schottky barrier between nickel species and titania can

Effect of localized helium ion irradiation on the performance of synthetic monolayer MoS₂ field-effect transistors

• Jakub Jadwiszczak,
• Pierce Maguire,
• Conor P. Cullen,
• Georg S. Duesberg and
• Hongzhou Zhang

Beilstein J. Nanotechnol. 2020, 11, 1329–1335, doi:10.3762/bjnano.11.117

• the interface at this delivered dose. It may be expected that an increase in the Schottky barrier height will occur if the normally pinned Fermi level [42] is now a function of the physical state of the beam-altered metal–semiconductor interface. Ion beam pre-treatment of the contact region before

Effect of Ag loading position on the photocatalytic performance of TiO₂ nanocolumn arrays

• Jinghan Xu,
• Yanqi Liu and
• Yan Zhao

Beilstein J. Nanotechnol. 2020, 11, 717–728, doi:10.3762/bjnano.11.59

• electrons are injected intoTiO2, so the electric field intensity at the interface between Ag and TiO2 is the highest. Figure 9a shows the photoelectric energy conversion of the Ag–TiO2 structure. The contact between Ag and the n-type semiconductor TiO2 will form a Schottky barrier at the interface, which

• results in the bending of the energy band of TiO2 [37]. Due to the influence of SPR and LSPR effects, Ag can absorb visible light and make the electron near the Fermi level transition to a higher level [38]. When the high-level electrons have enough energy, the electrons will cross the Schottky barrier

Formation of metal/semiconductor Cu–Si composite nanostructures

• Natalya V. Yumozhapova,
• Andrey V. Nomoev,
• Vyacheslav V. Syzrantsev and
• Erzhena C. Khartaeva

Beilstein J. Nanotechnol. 2019, 10, 2497–2504, doi:10.3762/bjnano.10.240

• microwave electronics and radiophotonics due to their large dipole moment and the appearance of a Schottky barrier in the contact region [14]. The structure of these nanoparticles is primarily determined by the methods and conditions of synthesis, which should allow us to combine the two materials even if

Kelvin probe force microscopy of the nanoscale electrical surface potential barrier of metal/semiconductor interfaces in ambient atmosphere

• Petr Knotek,
• Tomáš Plecháček,
• Jan Smolík,
• Petr Kutálek,
• Filip Dvořák,
• Milan Vlček,
• Jiří Navrátil and
• Čestmír Drašar

Beilstein J. Nanotechnol. 2019, 10, 1401–1411, doi:10.3762/bjnano.10.138

• nanosheets through the reaction with the Bi2Se3. The Schottky barrier formed by the 1D and 2D nanoinclusions was characterized by means of atomic force microscopy (AFM). We used Kelvin probe force microscopy (KPFM) in ambient atmosphere at the nanoscale and compared the results to those of ultraviolet

• photoelectron spectroscopy (UPS) in UHV at the macroscale. The existence of the Schottky barrier was demonstrated at +120 meV for the Mo layer and −80 meV for the Au layer reflecting the formation of MoSe2 and Au/Bi2Se3 alloy, respectively. The results of both methods (KPFM and UPS) were in good agreement. We

• revealed that long-time exposure (tens of seconds) to the electrical field leads to deep oxidation and the formation of perturbations greater than 1 µm in height, which hinder the I–V measurements. Keywords: Kelvin probe atomic force microscope; nanoinclusion; Schottky barrier; thermoelectric materials

Integration of LaMnO_3+δ films on platinized silicon substrates for resistive switching applications by PI-MOCVD

• Raquel Rodriguez-Lamas,
• Dolors Pla,
• Odette Chaix-Pluchery,
• Benjamin Meunier,
• Fabrice Wilhelm,
• Andrei Rogalev,
• Laetitia Rapenne,
• Xavier Mescot,
• Quentin Rafhay,
• Hervé Roussel,
• Michel Boudard,
• Carmen Jiménez and
• Mónica Burriel

Beilstein J. Nanotechnol. 2019, 10, 389–398, doi:10.3762/bjnano.10.38

• functions of electrode and active material, creating an ohmic contact or a Schottky barrier. Furthermore, some electrodes can be oxidized forming a new interface layer that can also act as oxygen reservoir (e.g., Ti, TiO2) [20][21][22]. The use of Pt as bottom electrode in our LMO-based devices guarantees

Graphene-enhanced metal oxide gas sensors at room temperature: a review

• Dongjin Sun,
• Yifan Luo,
• Marc Debliquy and
• Chao Zhang

Beilstein J. Nanotechnol. 2018, 9, 2832–2844, doi:10.3762/bjnano.9.264

• , meaning that electrons transfer from rGO to SnO2 in the heterojunctions. The Schottky barrier is only 0.2 eV due to the changed Fermi level of the composite structure after achieving a dynamic balance of the electron flow, indicating that the electrons are able to pass through the energy barrier. In

• summary, the SnO2–rGO sensor allow for the transition of electrons even at room temperature because of its low Schottky barrier. When exposed to air at room temperature, oxygen molecules obtain electrons from n-type SnO2–rGO hybrids to form O2−. The electron depletion layers generated on the interfaces of

• . Moreover, the introduction of Ag nanoparticles reduced the Schottky barrier of the ternary composites so that those electrons with lower energy were able to cross the energy barrier at room temperature. Thus the sensor can work near room temperature. The most important reason for the excellent NO2 sensing

High-temperature magnetism and microstructure of a semiconducting ferromagnetic (GaSb)_1−x(MnSb)_x alloy

• Leonid N. Oveshnikov,
• Elena I. Nekhaeva,
• Alexey V. Kochura,
• Alexander B. Davydov,
• Mikhail A. Shakhov,
• Sergey F. Marenkin,
• Oleg A. Novodvorskii,
• Alexander P. Kuzmenko,
• Alexander L. Vasiliev,
• Boris A. Aronzon and
• Erkki Lahderanta

Beilstein J. Nanotechnol. 2018, 9, 2457–2465, doi:10.3762/bjnano.9.230

• with the effective penetration depth of the carrier (hole) wave function, lp, under triangular barrier. Taking into account that the energy gap in GaSb is Eg = 0.7 eV and the Schottky barrier height is about (1/3)Eg[21], the value of dbarrier can be estimated as 2 nm at Np = 1020 cm−3 while lp is of

Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO₂/Si₃N₄-coating

• Dirk König,
• Daniel Hiller,
• Noël Wilck,
• Birger Berghoff,
• Merlin Müller,
• Sangeeta Thakur,
• Giovanni Di Santo,
• Luca Petaccia,
• Joachim Mayer,
• Sean Smith and
• Joachim Knoch

Beilstein J. Nanotechnol. 2018, 9, 2255–2264, doi:10.3762/bjnano.9.210

• -underlap. Schottky-potential barriers build up although the same Schottky-barrier-height at the metal–Si interface at drain and source were chosen in both devices to examine the effectiveness of “doping” (Si3N4-coating) of underlap areas. A shift of the Schottky-barrier for device II due to workfunction

Localized photodeposition of catalysts using nanophotonic resonances in silicon photocathodes

• Evgenia Kontoleta,
• Sven H. C. Askes,
• Lai-Hung Lai and
• Erik C. Garnett

Beilstein J. Nanotechnol. 2018, 9, 2097–2105, doi:10.3762/bjnano.9.198

• nanoparticles act as electron-trapping centers on the surface of TiO2 [45][46]. After the formation of the very first platinum nanoparticles, photogenerated electrons from the silicon nanostructures are transferred to TiO2 and in sequence to the already formed platinum. The Schottky barrier between TiO2 and

Nonlinear effect of carrier drift on the performance of an n-type ZnO nanowire nanogenerator by coupling piezoelectric effect and semiconduction

• Yuxing Liang,
• Shuaiqi Fan,
• Xuedong Chen and
• Yuantai Hu

Beilstein J. Nanotechnol. 2018, 9, 1917–1925, doi:10.3762/bjnano.9.183

• being negatively charged. At the same time, a Schottky barrier formed between the AFM tip and the nanowire and the piezoelectric potential will not disappear as long as the mechanical stress is maintained. This potential can be made use of to generate an electrical current [30]. Recently, Fan et al

Cr(VI) remediation from aqueous environment through modified-TiO₂-mediated photocatalytic reduction

• Rashmi Acharya,
• Brundabana Naik and
• Kulamani Parida

Beilstein J. Nanotechnol. 2018, 9, 1448–1470, doi:10.3762/bjnano.9.137

Surface-plasmon-enhanced ultraviolet emission of Au-decorated ZnO structures for gas sensing and photocatalytic devices

• T. Anh Thu Do,
• Truong Giang Ho,
• Thu Hoai Bui,
• Quang Ngan Pham,
• Hong Thai Giang,
• Thi Thu Do,
• Duc Van Nguyen and
• Dai Lam Tran

Beilstein J. Nanotechnol. 2018, 9, 771–779, doi:10.3762/bjnano.9.70

• improved response (τRes = 9 s) and recovery time (τRec = 39 s). The enhanced gas sensing performance and photocatalytic degradation processes are suggested to be attributed to not only the surface plasmon resonance effect, but also due to a Schottky barrier between plasmonic Au and ZnO structures

Review: Electrostatically actuated nanobeam-based nanoelectromechanical switches – materials solutions and operational conditions

• Liga Jasulaneca,
• Jelena Kosmaca,
• Raimonds Meija,
• Jana Andzane and
• Donats Erts

Beilstein J. Nanotechnol. 2018, 9, 271–300, doi:10.3762/bjnano.9.29

• carry the risk of switch failure at higher operation voltages. In NEM switches with metal–semiconductor contacts, the type of the contact is determined by the mutual arrangement of the Fermi level of the metal and the valence and conduction bands of the semiconductor. The contact has a Schottky barrier

Combined scanning probe electronic and thermal characterization of an indium arsenide nanowire

• Tino Wagner,
• Fabian Menges,
• Heike Riel,
• Bernd Gotsmann and
• Andreas Stemmer

Beilstein J. Nanotechnol. 2018, 9, 129–136, doi:10.3762/bjnano.9.15

• measurements. Whereas the nanowire potential is symmetric around 0 μA near the left contact, we observe a pronounced asymmetry at the transition from the nanowire to the electrode on the right hand side. This indicates that the contact resistance here depends on polarity, hinting at the formation of a Schottky

• barrier between the wire and the electrode. Along the nanowire, the potential drop behaves mostly linear, indicating uniform transport properties. The potential gradient in the nanowire segment near the electrodes appears slightly increased due to the reduced wire diameter and increased resistance per

Two-dimensional carbon-based nanocomposites for photocatalytic energy generation and environmental remediation applications

• Suneel Kumar,
• Ashish Kumar,
• Ashish Bahuguna,
• Vipul Sharma and
• Venkata Krishnan

Beilstein J. Nanotechnol. 2017, 8, 1571–1600, doi:10.3762/bjnano.8.159

• electrons from the CB of excited semiconductors to the cocatalyst and results in the formation of a Schottky barrier, which efficiently decreases the recombination of charge carriers [102]. Hence cocatalysts play a crucial role in the enhancement of photocatalytic activity by providing abundant reaction

Charge transport in organic nanocrystal diodes based on rolled-up robust nanomembrane contacts

• Vineeth Kumar Bandari,
• Lakshmi Varadharajan,
• Longqian Xu,
• Abdur Rehman Jalil,
• Mirunalini Devarajulu,
• Pablo F. Siles,
• Feng Zhu and
• Oliver G. Schmidt

Beilstein J. Nanotechnol. 2017, 8, 1277–1282, doi:10.3762/bjnano.8.129

• F16CuPc buffer layers to experience much-improved charge injection/transport under the positive bias, and a smaller open voltage compared to the devices consisting of pure VOPc and single F16CuPc buffer layer. As introduced in our previous report [19], the Schottky barrier due to the poor electric contact

• VOPc and F16CuPc becomes weak and the contact between the organic material and the electrodes lose their ohmic contact properties. Thus, the current is mainly governed by the Schottky barrier. For higher temperature and higher bias, the current depends on the charge transport ability which is limited

Impact of contact resistance on the electrical properties of MoS₂ transistors at practical operating temperatures

• Filippo Giannazzo,
• Gabriele Fisichella,
• Aurora Piazza,
• Salvatore Di Franco,
• Giuseppe Greco,
• Simonpietro Agnello and
• Fabrizio Roccaforte

Beilstein J. Nanotechnol. 2017, 8, 254–263, doi:10.3762/bjnano.8.28

• and optoelectronic devices. However, several issues need to be addressed to fully exploit its potential for field effect transistor (FET) applications. In this context, the contact resistance, RC, associated with the Schottky barrier between source/drain metals and MoS2 currently represents one of the

• power dissipation. From the analysis of the transfer characteristics (ID−VG) in the subthreshold regime, the Schottky barrier height (ΦB ≈ 0.18 eV) associated with the Ni/MoS2 contact was evaluated. The resulting contact resistance in the on-state (electron accumulation in the channel) was also

• Fermi level pinning close to the conduction band of MoS2 [5], resulting in a Schottky barrier height (SBH) for electrons typically ranging from 0.1 to 0.3 eV. The origin of this Fermi level pinning is currently a matter of investigation and a crucial role seems to be played by nanoscale defects

Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals

• Ivan Shtepliuk,
• Jens Eriksson,
• Volodymyr Khranovskyy,
• Tihomir Iakimov,
• Anita Lloyd Spetz and
• Rositsa Yakimova

Beilstein J. Nanotechnol. 2016, 7, 1800–1814, doi:10.3762/bjnano.7.173

• graphene on silicon carbide is fabricated by thermal decomposition of a Si-face 4H-SiC wafer in argon atmosphere. Current–voltage characteristics of the graphene/SiC Schottky junction were analyzed by applying the thermionic-emission theory. Extracted values of the Schottky barrier height and the ideality

• factor are found to be 0.4879 ± 0.013 eV and 1.01803 ± 0.0049, respectively. Deviations of these parameters from average values are smaller than those of previously observed literature data, thereby implying uniformity of the Schottky barrier height over the whole diode area, a stable rectifying

• ) calculations we gain insight into the nature of the interaction of cadmium, mercury and lead with graphene as well as estimate the work function and the Schottky barrier height of the graphene/SiC structure before and after applying heavy metals to the sensing material. A shift of the I–V characteristics of

Synthesis and applications of carbon nanomaterials for energy generation and storage

• Marco Notarianni,
• Jinzhang Liu,
• Kristy Vernon and
• Nunzio Motta

Beilstein J. Nanotechnol. 2016, 7, 149–196, doi:10.3762/bjnano.7.17

Large area scanning probe microscope in ultra-high vacuum demonstrated for electrostatic force measurements on high-voltage devices

• Urs Gysin,
• Thilo Glatzel,
• Thomas Schmölzer,
• Adolf Schöner,
• Sergey Reshanov,
• Holger Bartolf and
• Ernst Meyer

Beilstein J. Nanotechnol. 2015, 6, 2485–2497, doi:10.3762/bjnano.6.258

• architectures for power electronic switches and rectifiers [58]. However, the reduction of the Schottky barrier height as well as tunneling processes are still limiting the voltage and efficiency of SiC Schottky barrier diodes. An alternative approach for such devices is the so-called junction barrier Schottky